參數(shù)資料
型號: 2SK2725
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 6/10頁
文件大?。?/td> 49K
代理商: 2SK2725
2SK2725
6
0.1
0.3
1
3
10
30
100
0
10
20
30
40
50
50
2000
1000
500
100
200
500
400
300
200
100
0
20
16
12
8
4
8
16
24
32
40
0
1000
300
30
100
3
10
1
0.1
0.2
1
2
10
1000
500
100
200
20
50
10
di / dt = 100 A /
μ
s
V = 0, Ta = 25
°
C
10
20
5
2
V = 0
f = 1 MHz
Ciss
Coss
Crss
5
0.5
V = 30 V, V = 30 V
PW = 10
μ
s, duty < 1 %
tf
r
d(on)
t
d(off)
t
I = 5 A
V
GS
V
DS
V = 100 V
250 V
400 V
V = 400 V
250 V
100 V
Reverse Drain Current I (A)
R
Body to Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
Drain Current I (A)
S
Switching Characteristics
相關(guān)PDF資料
PDF描述
2SK2726 Silicon N Channel MOS FET High Speed Power Switching
2SK2727 Silicon N Channel MOS FET High Speed Power Switching
2SK2728 Silicon N Channel MOS FET High Speed Power Switching
2SK2729 Silicon N Channel MOS FET High Speed Power Switching
2SK2730 Silicon N Channel MOS FET High Speed Power Switching
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