參數(shù)資料
型號: 2SK2723
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級
文件頁數(shù): 2/8頁
文件大小: 83K
代理商: 2SK2723
2
2SK2723
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source
R
DS (on) 1
V
GS
= 10 V, I
D
= 13 A
28
40
m
On-state Resistance
R
DS (on) 2
V
GS
= 4 V, I
D
= 13 A
45
60
m
Gate to Source Cutoff Voltage
V
GS (off)
V
DS
= 10 V, I
D
= 1 mA
1.0
1.6
2.0
V
Forward Transfer Admittance
y
fs
V
DS
= 10 V, I
D
= 13 A
8.0
18
S
Drain Leakage Current
I
DSS
V
DS
= 60 V, V
GS
= 0
10
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20 V, V
DS
= 0
±
10
μ
A
Input Capacitance
C
iss
V
DS
= 10 V
830
pF
Output Capacitance
C
oss
V
GS
= 0
430
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
185
pF
Turn-On Delay Time
t
d (on)
I
D
= 13 A
21
ns
Rise Time
t
r
V
GS (on)
= 10 V
185
ns
Turn-Off Delay Time
t
d (off)
V
DD
= 30 V
100
ns
Fall Time
t
f
R
G
= 10
110
ns
Total Gate Charge
Q
G
I
D
= 25 A
35
nC
Gate to Source Charge
Q
GS
V
DD
= 48 V
2.8
nC
Gate to Drain Charge
Q
GD
V
GS
= 10 V
15
nC
Body Diode Forward Voltage
V
F (S-D)
I
F
= 25 A, V
GS
= 0
1.0
V
Reverse Recovery Time
t
r r
I
F
= 25 A, V
GS
= 0
60
ns
Reverse Recovery Charge
Q
r r
di/dt = 100 A/
μ
s
125
nC
t = 1 s
Duty Cycle
1 %
V
GS
0
R
G
V
DD
R
L
R
G
= 10
V
GS
Wave Form
V
GS (on)
I
D
t
d (on)
t
on
t
off
t
r
t
d (on)
t
r
010 %
010 %
10 %
90 %
90 %
90 %
I
D
Wave Form
PG.
D.U.T
V
DD
R
L
50
PG.
D.U.T
t
I
G
= 2 mA
Test Circuit 1 Switching Time
Test Circuit 2 Gate Charge
V
GS
I
D
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