參數(shù)資料
型號： 2SK2708
廠商： SANKEN ELECTRIC CO LTD
元件分類： JFETs
英文描述： MOSFET
中文描述： 7 A, 600 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-220F, FM20, 3 PIN
文件頁數(shù)： 1/1頁
文件大小： 35K
代理商： 2SK2708
Absolute Maximum Ratings
Electrical Characteristics
Symbol
Ratings
Unit
V
DSS
600
V
(BR) DSS
I
GSS
I
DSS
V
TH
Re
(yfs)
R
DS (on)
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
SD
600
V
nA
μ
A
V
S
pF
pF
pF
ns
ns
ns
ns
V
I
D
= 100
μ
A, V
GS
= 0V
V
GS
=
±
30V
V
DS
= 600V, V
GS
= 0V
V
DS
= 10V, I
D
= 1mA
V
DS
= 20V, I
D
= 3.5A
V
GS
= 10V, I
D
= 3.5A
V
V
GSS
±
30
±
100
100
4.0
V
I
D
±
7
A
I
D (pulse)
±
28
(Ta = 25
o
C)
(Ta = 25
o
C)
2.0
4.0
A
P
D
40 (Tc = 25
o
C)
6.0
0.85
950
220
120
30
27
100
50
0.9
3.0
W
E
AS
150
1.1
1.5
I
SD
= 7A, V
GS
= 0V
mJ
Tch
150
V
DS
= 10V, f = 1.0MHz,
V
GS
= 0V
I
D
= 3.5A, V
DD
= 250V,
R
L
= 71
, V
GS
= 10V,
See Figure 2 on Page 5.
o
C
I
AS
7
A
Tstg
–
55 to +150
o
C
Symbol
Unit
Conditions
Ratings
typ
max
min
36
*
2
*
1
0
10
20
3
2
1
0
4
7
5
6
5
15
4.5V
5V
V
GS
= 10V
0
0
2
7
6
5
3
4
0.2
0.4
0.6
0.8
1.0
–
50
0
0
50
100
150
1.0
0.5
1.5
2.0
2.5
4
1
5
10
20
0
7
5
6
4
3
V
DS
= 20V
25
o
C
125
o
C
0
2
4
6
8
0
2
4
6
10
T
C
=
–
55
o
C
10V
5.5V
2
1
0.05
0.3
0.1
0.5
I
D
(A)
1
0.5
1
10
5
7
5
8
V
GS
= 4V
25
o
C
125
o
C
V
DS
= 20V
T
C
=
–
55
o
C
I
D
= 7A
I
D
= 3.5A
I
D
= 3.5A
V
GS
= 10V
0
10
20
30
40
50
40
100
500
1000
5000
Ciss
Coss
Crss
V
GS
= 0V
f
= 1MHz
00
0.5
1.0
1.5
2
4
7
5
6
3
1
5V,10V
V
GS
= 0V
3
5
10
50 100
V
DS
(V)
700
500
0.05
0.1
0.5
1
5
30
10
I
D
(pulse) max
R
DS(ON
I
D
max
DCOPERATON
1ms(1sho)
100
μ
s(1sho)
0
10
20
30
40
0
50
100
150
Wt niiehasn
Without heatsink
2SK2708
External dimensions 1 ...... FM20
*
1: P
W
100
μ
s, duty cycle 1%
2: V
DD
= 30V, L = 6mH, I
L
= 7A, unclamped, R
G
= 50
,
See Figure 1 on Page 5.
(Tc=25
o
C)
R
D
)
R
D
)
R
(
(
C
Ta (
o
C)
V
D
V
DS
—
I
D
Characteristics
I
D
—
Re
(yfs)
Characteristics
V
DS
—
Capacitance
Characteristics
V
SD
—
I
DR
Characteristics
Ta
—
P
D
Characteristics
Safe Operating Area
V
GS
—
V
DS
Characteristics
T
C
—
R
DS (ON)
Characteristics
V
GS
—
I
D
Characteristics
I
D
—
R
DS (ON)
Characteristics
V
DS
(V)
V
SD
(V)
I
D
I
D
P
D
Tc (
o
C)
V
GS
(V)
V
GS
(V)
V
DS
(V)
I
D
(A)
I
D
I
D
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