- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33491 > 2SK2661 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF資料下載
參數(shù)資料
| 型號： | 2SK2661 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 408K |
| 代理商： | 2SK2661 |
2SK2661
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
—
±10
μA
Gate–source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
—
V
Drain cut–off current
IDSS
VDS = 500 V, VGS = 0 V
—
100
μA
Drain–source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drain–source ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
—
1.35
1.50
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
2.5
4.0
—
S
Input capacitance
Ciss
—
780
—
Reverse transfer capacitance
Crss
—
60
—
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
—
200
—
pF
Rise time
tr
—
12
—
Turn–on time
ton
—
25
—
Fall time
tf
—
15
—
Switching time
Turn–off time
toff
—
60
—
ns
Total gate charge (gate–source
plus gate–drain)
Qg
—
17
—
Gate–source charge
Qgs
—
11
—
Gate–drain (“miller”) Charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 5 A
—
6
—
nC
Source–Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
5
A
Pulse drain reverse current
(Note 1)
IDRP
—
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
1400
—
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V
dIDR / dt = 100 A / μs
—
9
—
μC
Marking
Lot No.
Note 4
K2661
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2678LS | 1.5 A, 600 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2683 | 16 A, 250 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FI |
| 2SJ453 | 250 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2680 | 6 A, 250 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FI |
| 2SK2684L-E | 30 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2661(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Nch,500V/5A/1.5ohm,TO-220AB |
| 2SK2662 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR PANASONIC |
| 2SK2662(Q) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 5A 3PIN TO-220(NIS) - Rail/Tube |
| 2SK2662R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK2662T | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 5A 3PIN SC-67 - Rail/Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。