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參數(shù)資料
| 型號： | 2SK2602 |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-16C1B, SC-65, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 407K |
| 代理商： | 2SK2602 |
2SK2602
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
—
±10
A
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 A, VDS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 600 V, VGS = 0 V
—
100
A
Drainsource breakdown voltage
I (BR) DSS
ID = 10 mA, VGS = 0 V
600
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 3 A,
—
0.9
1.25
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 3 A
2.0
5.5
—
S
Input capacitance
Ciss
—
1300
—
Reverse transfer capacitance
Crss
—
130
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
400
—
pF
Rise time
tr
—
25
—
Turnon time
ton
—
45
—
Fall time
tf
—
40
—
Switching time
Turnoff time
toff
—
150
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
30
—
Gatesource charge
Qgs
—
18
—
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 6 A
—
12
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
6
A
Pulse drain reverse current
(Note 1)
IDRP
—
24
A
Forward voltage (diode)
VDSF
IDR = 6 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
1000
—
ns
Reverse recovery charge
Qrr
IDR = 6 A, VGS = 0 V, dIDR / dt = 100 A / s
—
7
—
C
Marking
K2602
TOSHIBA
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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| 2SK2610 | 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2611 | 9 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2614(2-7B2B) | 20 A, 50 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2602(F,T) | 功能描述:MOSFET MOSFET N-Ch 600V 6A Rdson 1.25 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2603 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 800V 3A 3PIN TO-220 - Rail/Tube |
| 2SK2603(F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 800V 3A TO-220AB |
| 2SK2604(F) | 制造商:Toshiba 功能描述:Nch 800V 5A 2.2@10V TO3P(N) Bulk |
| 2SK2604(F,T) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH, 800V, 5A - Rail/Tube |
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