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參數(shù)資料
| 型號(hào)： | 2SK2598(2-10S2B) |
| 元件分類： | JFETs |
| 英文描述： | 13 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-10S2B, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 418K |
| 代理商： | 2SK2598(2-10S2B) |
2SK2598
2002-06-27
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
A
Drain cutoff current
IDSS
VDS = 250 V, VGS = 0 V
—
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
200
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
—
3.5
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 6.5 A
—
0.18
0.25
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 6.5 A
6
13
—
S
Input capacitance
Ciss
—
1800
—
Reverse transfer capacitance
Crss
—
130
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
500
—
pF
Rise time
tr
—
15
—
Turnon time
ton
—
25
—
Fall time
tf
—
10
—
Switching time
Turnoff time
toff
—
70
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
40
—
Gatesource charge
Qgs
—
25
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 200 V, VGS = 10 V, ID = 13 A
—
15
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
13
A
Pulse drain reverse current
(Note 1)
IDRP
—
52
A
Forward voltage (diode)
VDSF
IDR = 13 A, VGS = 0 V
—
2.0
V
Reverse recovery time
trr
—
260
—
ns
Reverse recovery charge
Qrr
IDR = 13 A, VGS = 0 V
dIDR / dt = 100 A / s
—
0.3
—
C
Marking
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