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參數(shù)資料
| 型號： | 2SK2595AXTB-E |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | RP8P, 2 PIN |
| 文件頁數(shù)： | 11/16頁 |
| 文件大小： | 165K |
| 代理商： | 2SK2595AXTB-E |
2SK2595
Rev.4.01 Jan 30, 2006 page 2 of 13
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Zero gate voltage drain current
IDSS
—
10
A
VDS = 12 V, VGS = 0
Gate to source leak current
IGSS
—
±5.0
A
VGS = ±10 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
0.6
—
1.3
V
VDS = 12 V, ID = 6 mA
Input capacitance
Ciss
—
68
—
pF
VGS = 5 V, VDS = 0, f = 1 MHz
Output capacitance
Coss
—
27
—
pF
VDS = 12 V, VGS = 0, f = 1 MHz
Output Power
Pout
5.37
7
—
W
Drain Efficiency
ηD
50
60
—
%
VDS = 12 V, IDO = 500 mA,
f = 836.5 MHz, Pin = 0.89 W
Main Characteristics
Maximum Channel Power
Dissipation Curve
Case Temperature Tc (
°C)
Channel
Power
Dissipation
Pch
(W)
0
8
16
24
32
0
50
100
150
200
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
0
2
6
8
10
4
024
8
10
6
VGS = 2 V
3 V
4 V
5 V
6 V
8 V
Pulse Test
10
V
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
0
1
2
4
5
01
34
5
3
2
VDS = 12 V
Pulse Test
TC = -25°C
25
°C
75
°C
Forward Transfer Admittance
vs. Drain Current
Drain Current ID (A)
Forward
Transfer
Admittance
|y
fs
|
(S)
0.1
0.2
2
5
10
0.5
0.1
0.2
0.5
5
10
2
1
VDS = 12 V
Pulse Test
TC = -25°C
25
°C
75
°C
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SK2596 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK2596_07 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK2596BX | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK2596BXTL-E | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH - Bulk |
| 2SK2597 | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
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