- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33491 > 2SK2595AX UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | 2SK2595AX |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | RP8P-2 |
| 文件頁數(shù)： | 8/14頁 |
| 文件大?。?/td> | 159K |
| 代理商： | 2SK2595AX |
2SK2595
Rev.3.00, Aug.26.2004, page 3 of 13
70
-10
- 6
- 2
2
6
10
50
60
VDS = 0
f = 1 MHz
100
20
10
50
0.1 0.2
0.5
1
2
5
10 20
50
VGS = 0
f = 1 MHz
Input Capacitance vs.
Gate to Source Voltage
Gate to Source Voltage VGS (V)
Input
Capacitance
Ciss
(pF)
Drain to Source VDS (V)
Output
Capacitance
Coss
(pF)
Output Capacitance vs.
Drain to Source Voltage
10
2
1
5
0.1 0.2
0.5
1
2
5
10 20
50
VGS = 0
f = 1 MHz
10
8
6
4
2
0
100
80
60
40
20
0
1
0.8
0.6
0.4
0.2
VDS = 12 V
IDO = 500 mA
f = 836.5 MHz
Po
η
D
Output Power, Drain Efficiency
vs. Input Power
Output
Power
Po
(W)
Input power Pin (W)
Drain
Efficiency
η
D
(%)
Reverse Transfer Capacitance vs.
Drain to Gate Voltage
Drain to Gate Voltage VDG (V)
Reverse
Transfer
Capacitance
Crss
(pF)
0.1
10
2
1
5
0.2
0.5
0.1
0.02
0.05
0.01
0.1
0.2
0.5
12
5
10
Tc = –25
°C
25
°C
75
°C
1.2
1.0
0.8
0.6
0.4
0.2
- 25
0
025
50
75
100
125
1 mA
10 mA
I
D
= 0.1
mA
VDS = 12 V
Drain to Source Saturation Voltage
vs. Drain Current
Drain Current
ID (A)
Ambient Temperature Ta (
°C)
Gate
to
Source
Cutoff
Voltage
Gate to Source Cutoff Voltage vs.
Ambient Temperature
Drain
to
Source
Saturation
Voltage
V
DS(sat)
(V)
VGS = 10 V
Pulse Test
V
GS(off)
(V)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2595AX | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 2SK2596BXTL-E | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 2SK2598(2-10S1B) | 13 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2598(2-10S2B) | 13 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2602 | 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2596 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK2596_07 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK2596BX | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK2596BXTL-E | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH - Bulk |
| 2SK2597 | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。