參數(shù)資料
型號(hào): 2SK2590
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場(chǎng)效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁數(shù): 3/5頁
文件大小: 26K
代理商: 2SK2590
2SK2590
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
200
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
±
10
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
=160 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 4 A
V
GS
= 10 V*
1
I
D
= 4 A
V
DS
= 10 V*
1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
250
V
GS(off)
R
DS(on)
2.0
4.0
V
Static drain to source on state
resistance
0.33
0.45
Forward transfer admittance
|y
fs
|
3.0
4.5
S
Input capacitance
Ciss
700
pF
Output capacitance
Coss
260
pF
Reverse transfer capacitance
Crss
45
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
20
ns
I
D
= 4 A
V
GS
= 10 V
R
L
= 7.5
Rise time
45
ns
Turn-off delay time
50
ns
Fall time
35
ns
Body to drain diode forward
voltage
1.1
V
I
F
= 7 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse Test
t
rr
150
ns
I
= 7 A, V
= 0,
diF / dt = 100 A /
μ
s
See characteristics curves of 2SK1957.
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