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參數(shù)資料
| 型號： | 2SK2569ZN-TR-E |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-59A, MPAK-3 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 129K |
| 代理商： | 2SK2569ZN-TR-E |
2SK2569
Rev.3.00 Dec 27, 2006 page 3 of 6
Main Characteristics
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain
Current
I
D
(A)
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State
Resistance vs. Drain Current
1
0.3
0.1
0.03
0.01
0.003
0.001
0.1
0.3
1
3
10
30
100
Ta = 25
°C
1 ms
PW
=
10
ms
DC
Operation
Operation in
this area is
limited by RDS(on)
0.20
0.16
0.12
0.08
0.04
0
24
6
8
10
10 V 4 V
2.5 V
2.3 V
2 V
VGS = 1.5 V
Pulse Test
0.20
0.16
0.12
0.08
0.04
0
Tc = 75
°C
25
°C
–25
°C
1
2345
VDS = 5 V
Pulse Test
0.5
0.4
0.3
0.2
0.1
0
24
6
8
10
ID = 0.2 A
0.1 A
0.05 A
Pulse Test
20
10
2
5
1
0.2
0.5
0.01 0.02
0.05
0.1
0.2
0.5
1
VGS = 2.5 V
4 V
Pulse Test
200
150
100
50
0
50
100
150
200
Case Temperature
Tc (
°C)
Channel
Dissipation
Pch
(mW)
Power vs. Temperature Derating
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2570 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET Low Frequency Power Switching |
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| 2SK2570ZL-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET Low Frequency Power Switching |
| 2SK2570ZL-TR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET Low Frequency Power Switching |
| 2SK2571 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
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