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參數(shù)資料
| 型號(hào)： | 2SK2554 |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | 2SK2554 |
2SK2554
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
100
AV
DS = 60 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
4.5
6
m
I
D = 40 A
V
GS = 10 V*
1
—
5.8
10
m
I
D = 40 A
V
GS = 4 V*
1
Forward transfer admittance
|y
fs|50
80
—
S
I
D = 40 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
7700
—
pF
V
DS = 10 V
Output capacitance
Coss
—
4100
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
760
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
60
—
ns
I
D = 40 A
Rise time
t
r
—
420
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
1200
—
ns
R
L = 0.75
Fall time
t
f
—
900
—
ns
Body to drain diode forward
voltage
V
DF
—
0.95
—
V
I
F = 75 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
105
—
ns
I
F = 75 A, VGS = 0
diF / dt = 50 A /
s
Note:
1. Pulse Test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2554-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2555 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述: |
| 2SK2556 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述: |
| 2SK2557 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述: |
| 2SK2559 | 制造商:SHINDENGEN 制造商全稱(chēng):Shindengen Electric Mfg.Co.Ltd 功能描述:VZ Series Power MOSFET(200V 10A) |
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