參數(shù)資料
型號(hào): 2SK2551
元件分類: JFETs
英文描述: 50 A, 50 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, 2-16C1B, 3 PIN
文件頁(yè)數(shù): 2/3頁(yè)
文件大?。?/td> 390K
代理商: 2SK2551
2SK2551
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cutoff current
IDSS
VDS = 50 V, VGS = 0 V
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
50
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
3.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 25 A
7.2
11
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 25 A
30
50
S
Input capacitance
Ciss
4000
Reverse transfer capacitance
Crss
800
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
2000
pF
Rise time
tr
25
Turnon time
ton
40
Fall time
tf
120
Switching time
Turnoff time
toff
360
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
130
Gatesource charge
Qgs
90
Gatedrain (“miller”) charge
Qgd
VDD ≈ 40 V, VGS = 10 V, ID = 50 A
40
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
50
A
Pulse drain reverse current
(Note 1)
IDRP
200
A
Forward voltage (diode)
VDSF
IDR = 50 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
140
ns
Reverse recovered charge
Qrr
IDR = 50 A, VGS = 0 V
dIDR / dt = 50 A/μs
77
μC
Marking
K2551
Lot No.
Note
Part No. (or abbreviation code)
Note: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as
to environmental matters such as the RoHS compatibility of
Product. The RoHS is the Directive 2002/95/EC of the European
Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical
and electronic equipment.
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