參數(shù)資料
型號: 2SK2481
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級
文件頁數(shù): 1/8頁
文件大?。?/td> 117K
代理商: 2SK2481
MOS FIELD EFFECT TRANSISTOR
2SK2481
DESCRIPTION
The 2SK2481 is N-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
FEATURES
Low On-Resistance
R
DS(on)
= 4.0
(V
GS
= 10 V, I
D
= 2.0 A)
Low C
iss
C
iss
= 900 pF TYP
.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
*
Total Power Dissipation (T
c
= 25 C)
Total Power Dissipation (T
A
= 25 C)
Channel Temperature
Storage Temperature
Single Avalanche Current
**
Single Avalanche Energy
**
*
PW
10
μ
s, Duty Cycle
1 %
**
Starting T
ch
= 25 C, R
G
= 25
, V
GS
= 20 V
0
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
900
±
30
±
4.0
±
12
70
1.5
150
V
V
A
A
W
W
C
–55 to +150 C
4.0
65.9
A
mJ
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PACKAGE DIMENSIONS
(in millimeters)
Document No. D10273EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
1995
DATA SHEET
10.6 MAX.
10.0
3
3.6 ± 0.2
5
1
6
1
1.3 ± 0.2
0.75 ± 0.1
2.54
2.54
4.8 MAX.
1.3 ± 0.2
0.5 ± 0.2
2.8 ± 0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
4
1 2 3
Body
Diode
Source
Drain
Gate
相關(guān)PDF資料
PDF描述
2SK2482 Switching N-channel power MOS FET industrial use
2SK2483 Switching N-channel power MOS FET industrial use
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2SK2486 Switching N-channel power MOS FET industrial use
2SK2487 Switching N-channel power MOS FET industrial use
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2SK2482 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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2SK2483 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE