參數(shù)資料
型號(hào): 2SK2462
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí)
文件頁數(shù): 3/8頁
文件大小: 114K
代理商: 2SK2462
2SK2462
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
FORWARD BIAS SAFE OPERATING AREA
V
DS
-
Drain to Source Voltage - V
I
D
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
1
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - C
d
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - C
P
T
0
20
40
60
80
100
120
140
160
70
60
50
40
30
20
10
0.1
1
1
10
100
10
100
1000
T
= 25
C
Single Pulse
0
4
6
8
10
20
30
40
5
10
15
10
100
1000
Pulsed
50
2
0
I
D(pulse)
1ms
PW=10 s
μ
Powe DsspaionLmted
R
=10V
(a V
GS
Pulsed
V
GS
= 4 V
V
GS
= 6 V
V
GS
= 10 V
DC
200ms
I
D(DC)
V
DS
=10 V
100 s
μ
T
A
= –25 C
25 C
125 C
0
20
40
60
80
100
120
140
160
20
40
60
80
100
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