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參數(shù)資料
| 型號： | 2SK2461 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 114K |
| 代理商： | 2SK2461 |
2SK2461
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-Resistance
R
DS(on)1
58
80
V
GS
= 10 V, I
D
= 10 A
Drain to Source On-Resistance
R
DS(on)2
70
100
V
GS
= 4 V, I
D
= 10 A
Gate to Source Cutoff Voltage
V
GS(off)
1.0
1.7
2.0
V
DS
= 10 V, I
D
= 1 mA
Forward Transfer Admittance
| y
fs
|
12
19
V
DS
= 10 V, I
D
= 10 A
Drain Leakage Current
I
DSS
10
V
DS
= 100 V, V
GS
= 0
Gate to Source Leakage Current
I
GSS
±
10
V
GS
=
±
20 V, V
DS
= 0
Input Capacitance
C
iss
1400
V
DS
= 10 V
Output Capacitance
C
oss
470
V
GS
= 0
Reverse Transfer Capacitance
C
rss
150
f = 1 MHz
Turn-On Delay Time
t
d(on)
21
I
D
= 10 A
Rise Time
t
r
110
V
GS(on)
= 10 V
Turn-Off Delay Time
t
d(off)
140
V
DD
= 50 V
Fall Time
t
f
110
R
G
= 10
Total Gate Charge
Q
G
51
I
D
= 20 A
Gate to Source Charge
Q
GS
4.9
V
DD
= 80 V
Gate to Drain Charge
Q
GD
15
V
GS
= 10 V
Body Diode Forward Voltage
V
F(S-D)
1.1
I
F
= 20 A, V
GS
= 0
Reverse Recovery Time
t
rr
170
I
F
= 20 A, V
GS
= 0
Reverse Recovery Charge
Q
rr
770
di/dt = 100 A/
μ
s
Test Circuit 3 Gate Charge
V
GS
= 20
→
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
Test Circuit 1 Avalanche Capability
PG.
R
G
= 10
D.U.T.
R
L
V
DD
Test Circuit 2 Switching Time
R
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
t = 1 s
Duty Cycle
≤
1 %
GS
Wave Form
D
Wave Form
V
GS
I
D
10 %
10 %
0
0
90 %
90 %
90 %
10 %
V
GS (on)
I
D
t
on
t
off
t
d (on)
t
r
t
d (off)
t
f
t
UNIT
m
m
V
S
μ
A
μ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2461-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 100V 20A 3-Pin(3+Tab) TO-220 Bulk |
| 2SK2462 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2462-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 100V 15A 3-Pin(3+Tab) TO-220 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 100V 15A 3-Pin(3+Tab) TO-220 Bulk |
| 2SK2463 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Small switching (60V, 2A) |
| 2SK2463T100 | 功能描述:MOSFET TRANS MOSFET N-CH 60V 2A TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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