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參數(shù)資料
| 型號： | 2SK2426 |
| 元件分類： | JFETs |
| 英文描述： | 0.35 ohm, POWER, FET |
| 封裝： | TO-220CFM, 3 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 27K |
| 代理商： | 2SK2426 |
2SK2426
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
250
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
AV
DS =250 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.23
0.35
I
D = 6 A
V
GS = 10 V*
1
Forward transfer admittance
|y
fs|
5.0
8.0
—
S
I
D = 6 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
1100
—
pF
V
DS = 10 V
Output capacitance
Coss
—
440
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
68
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
20
—
ns
I
D = 6 A
Rise time
t
r
—
65
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
100
—
ns
R
L = 5
Fall time
t
f
—44—ns
Body to drain diode forward
voltage
V
DF
—
1.0
—
V
I
F = 12 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
200
—
ns
I
F = 12 A, VGS = 0,
di
F / dt = 100 A / s
Note
1. Pulse Test
See characteristics curves of 2SK1761, 2SK1762.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2427 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SOT-186 |
| 2SK2428 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 10A I(D) | SOT-186 |
| 2SK2429 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 3A I(D) | SIP |
| 2SK2430 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 3A I(D) | TO-252VAR |
| 2SK2431 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
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