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參數(shù)資料
| 型號(hào)： | 2SK2426-E |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 250 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220CFM, 3 PIN |
| 文件頁(yè)數(shù)： | 7/7頁(yè) |
| 文件大?。?/td> | 951K |
| 代理商： | 2SK2426-E |
Data Sheet D17077EJ3V0DS
7
2SK3918
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
2) TO-252 (MP-3ZK)
6.6
±0.2
Mold Area
2.3
±0.1
0.5
±0.1
0.76
±0.1
0.5
±0.1
No Plating
5.3 TYP.
0.7
TYP.
6.1
±
0.2
1.8
±
0.2
9.3
TYP.
4.0
MIN
.
1.02
TYP.
16.1
TYP.
4.3 MIN.
1
4
23
1.14 MAX.
2.3 TYP.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
6.5
±0.2
2.3
±0.1
0.5
±0.1
0.76
±0.12
0 to 0.25
0.5
±0.1
1.0
No Plating
5.1 TYP.
1.0
TYP.
6.1
±
0.2
0.51
MIN.
4.0
MIN
.
0.8
10.4
MAX.
(9.8
TYP.)
4.3 MIN.
1
4
23
1.14 MAX.
2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
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| 2SK2430 | 3 A, 30 V, N-CHANNEL, Si, POWER, MOSFET |
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| 2SK2105 | 2 A, 100 V, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2104 | 5 A, 60 V, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2427 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SOT-186 |
| 2SK2428 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 10A I(D) | SOT-186 |
| 2SK2429 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 3A I(D) | SIP |
| 2SK2430 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 3A I(D) | TO-252VAR |
| 2SK2431 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
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