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參數(shù)資料
| 型號(hào)： | 2SK2418S |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅N溝道場效應(yīng)晶體管（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 2SK2418S |
2SK2418(L), 2SK2418(S)
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
20
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
10
—
—
V
I
G
=
±
200
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
100
μ
A
μ
A
V
V
GS
=
±
6.5 V, V
DS
= 0
V
DS
= 16 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 4 A
V
GS
= 4 V*
I
D
= 4 A
V
GS
= 2.5 V*
I
D
= 4 A
V
DS
= 10 V*
V
DS
= 10 V
V
= 0
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
V
GS(off)
R
DS(on)
0.5
—
1.5
Static drain to source on state
resistance
—
0.04
0.05
1
—
0.05
0.07
1
Forward transfer admittance
|y
fs
|
7
12
—
S
1
Input capacitance
Ciss
—
810
—
pF
Output capacitance
Coss
—
600
—
pF
Reverse transfer capacitance
Crss
—
155
—
pF
Turn-on delay time
t
d(on)
—
15
—
ns
I
D
= 4 A
V
GS
= 4 V
R
L
= 2.5
Rise time
t
r
t
d(off)
t
f
V
DF
—
90
—
ns
Turn-off delay time
—
150
—
ns
Fall time
—
120
—
ns
Body to drain diode forward
voltage
—
0.9
—
V
I
F
= 7 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse Test
t
rr
—
60
—
ns
I
= 7 A, V
= 0,
diF / dt = 20 A /
μ
s
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