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參數(shù)資料
| 型號： | 2SK2412 |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 60 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 211K |
| 代理商： | 2SK2412 |
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2412 is N-Channel MOS Field Effect Transistor de-
signed for high speed switching applications.
FEATURES
Low On-Resistance
RDS(on)1 = 70 m
MAX. (@ VGS = 10 V, ID = 10 A)
RDS(on)2 = 95 m
MAX. (@ VGS = 4 V, ID = 10 A)
Low Ciss
Ciss = 860 pF TYP.
Built-in G-S Gate Protection Diodes
High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±20
A
Drain Current (pulse)*
ID(pulse)
±80
A
Total Power Dissipation (Tc = 25 C)
PT1
30
W
Total Power Dissipation (TA = 25 C) PT2
2.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150
C
Single Avalanche Current**
IAS
20
A
Single Avalanche Energy**
EAS
22.5
mJ
*
PW
≤ 10
s, Duty Cycle ≤ 1 %
** Starting Tch = 25 C, RG = 25
, VGS = 20 V → 0
2SK2412
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
The information in this document is subject to change without notice.
1994
DATA SHEET
Document No. TC-2493
(O. D. No. TC-8031)
Date Published November 1994 P
Printed in Japan
Drain
Source
Body
Diode
Gate
Gate Protection
Diode
MP-45F(ISOLATED TO-220)
10.0 ±0.3
3.2 ±0.2
4.5 ±0.2
2.7 ±0.2
15.0
±0.3
3
±0.1
12.0
±0.2
13.5
MIN.
4
±0.2
1.3 ±0.2
1.5 ±0.2
2.54
0.7 ±0.1
0.65 ±0.1
2.5 ±0.1
12 3
1. Gate
2. Drain
3. Source
PACKAGE DIMENSIONS
(in millimeters)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2419 | POWER, FET, TO-220AB |
| 2SK1183 | POWER, FET, TO-220AB |
| 2SK3710 | POWER, FET |
| 2SK1188 | POWER, FET, TO-220AB |
| 2SK3724 | POWER, FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2412-AZ | 制造商:Renesas Electronics 功能描述:Nch 60V 20A 70m@10V IsolatedTO220 Bulk 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(3+Tab) TO-220 Isolated |
| 2SK2413 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK2413-T-AZ | 制造商:Renesas Electronics 功能描述:Nch 60V 10A 70m@10V MP10 Bulk |
| 2SK2414 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK2414-AZ | 制造商:Renesas Electronics 功能描述:Nch 60V 10A 70m@10V TO251 制造商:Renesas Electronics 功能描述:Nch 60V 10A 70m@10V TO251 Bulk 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 10A 3-Pin(2+Tab) TO-252 Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 10A 3-Pin(2+Tab) TO-252 |
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