參數(shù)資料
型號(hào): 2SK2411-Z
元件分類(lèi): JFETs
英文描述: 30 A, 60 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-220, 3 PIN
文件頁(yè)數(shù): 4/8頁(yè)
文件大小: 86K
代理商: 2SK2411-Z
2SK2411, 2SK2411-Z
4
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1000
100
10
1
0.1
0.01
10
100
1 m
10 m
100 m
1
10
100
1000
Single Pulse
PW - Pulse Width - s
1000
100
10
1
10
100
ID - Drain Current - A
60
50
40
30
20
10
0
5
10
15
20
ID = 15 A
Pulsed
VGS - Gate to Source Voltage - V
2.0
–50
1.5
1.0
0.5
0
50
100
150
Tch - Channel Temperature - °C
VDS = 10 V
ID = 1 mA
60
1
ID - Drain Current - A
50
30
20
10
0
10
100
R
DS
(on)
-
Drain
to
Source
On-State
Resistance
-
m
|y
fs
|-
Forward
Transfer
Admittance
-
S
rth
(t)
-
Transient
Thermal
Resistance
-
°C/W
R
DS
(on)
-
Drain
to
Source
On-State
Resistance
-
m
V
GS
(off)
-
Gate
to
Source
Cutoff
Voltage
-
V
40
VDS = 10 V
Pulsed
Rth (ch-a) = 83.3 °C/W
Rth (ch-c) = 1.67 °C/W
VGS = 10 V
VGS = 4 V
Pulsed
25 °C
75 °C
125 °C
TA = –25 °C
相關(guān)PDF資料
PDF描述
2SK2411 30 A, 60 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2415-Z 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
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