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參數(shù)資料
| 型號(hào)： | 2SK2399(2-7B2B) |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-7J1B, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 445K |
| 代理商： | 2SK2399(2-7B2B) |
2SK2399
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
A
Drain cutoff current
IDSS
VDS = 100 V, VGS = 0 V
—
100
A
Drainsource breakdown
voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
100
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
—
2.0
V
VGS = 4 V, ID = 2.5 A
—
0.22
0.30
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
—
0.17
0.23
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
2.0
4.5
—
S
Input capacitance
Ciss
—
500
—
Reverse transfer capacitance
Crss
—
80
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
190
—
pF
Rise time
tr
—
17
—
Turnon time
ton
—
25
—
Fall time
tf
—
50
—
Switching time
Turnoff time
toff
—
195
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
22
—
Gatesource charge
Qgs
—
15
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 80 V, VGS = 10 V, ID = 5 A
—
7
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
5
A
Pulse drain reverse current
(Note 1)
IDRP
—
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
160
—
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V, dIDR / dt = 50 A / s
—
0.28
—
C
Marking
K2399
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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