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參數(shù)資料
| 型號： | 2SK2393 |
| 元件分類： | JFETs |
| 英文描述： | 2.8 ohm, POWER, FET |
| 封裝： | TO-3PL, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 42K |
| 代理商： | 2SK2393 |
2SK2393
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
1500
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
8A
Drain peak current
I
D(pulse)*
1
20
A
Body to drain diode reverse drain current
I
DR
8A
Channel dissipation
Pch*
2
200
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes
1. PW
≤ 10 s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
1500
—
V
I
D = 10 mA, VGS = 0*
1
Gate to source leak current
I
GSS
——
±1
AV
GS = ±20 V, VDS = 0
Zero gate voltage drain current I
DSS
—
500
AV
DS = 1200 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
4.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
1.9
2.8
I
D = 4 A
V
GS = 15 V*
1
Forward transfer admittance
|y
fs|
1.8
3.0
—
S
I
D = 4 A
V
DS = 20 V*
1
Input capacitance
Ciss
—
4370
—
pF
V
DS = 10 V
Output capacitance
Coss
—
560
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
200
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
75
—
ns
I
D = 4 A
Rise time
t
r
—
180
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
260
—
ns
R
L = 7.5
Fall time
t
f
—
125
—
ns
Body to drain diode forward
voltage
V
DF
—
0.9
—
V
I
F = 8 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
6.5
—
sI
F = 8 A, VGS = 0,
di
F / dt = 100 A / s
Note
1. Pulse Test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2393-E | 制造商:Renesas 功能描述:Trans MOSFET N-CH 1.5KV 8A 3-Pin(3+Tab) TO-3PL |
| 2SK2394 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Low-Noise HF Amp Applications |
| 2SK2394_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Junction Silicon FET Low-Noise HF Amplifi er Applications |
| 2SK2394-6-TB-E | 功能描述:JFET N-CH 15V 50MA CP RoHS:是 類別:分離式半導體產(chǎn)品 >> JFET（結(jié)點場效應(yīng) 系列:- 標準包裝:8,000 系列:- 電流 - 漏極(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏極至源極電壓(Vdss):30V 漏極電流 (Id) - 最大:10mA FET 型:N 溝道 電壓 - 擊穿 (V(BR)GSS):- 電壓 - 切斷 (VGS 關(guān)）@ Id:180mV @ 1µA 輸入電容 (Ciss) @ Vds:4pF @ 10V 電阻 - RDS（開）:200 歐姆 安裝類型:表面貼裝 包裝:帶卷 (TR) 封裝/外殼:3-XFDFN 供應(yīng)商設(shè)備封裝:3-ECSP1006 功率 - 最大:100mW |
| 2SK2394-7-TB-E | 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
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