參數(shù)資料
型號: 2SK2391
元件分類: JFETs
英文描述: 20 A, 100 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: ROHS COMPLIANT, 2-10R1B, SC-67, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 431K
代理商: 2SK2391
2SK2391
2010-01-31
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cutoff current
IDSS
VDS = 100 V, VGS = 0 V
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
100
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
VGS = 4 V, ID = 10 A
0.09
0.13
Drainsource ON-resistance
RDS (ON)
VGS = 10 V, ID = 10 A
0.068
0.085
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 10 A
8
16
S
Input capacitance
Ciss
1100
Reverse transfer capacitance
Crss
180
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
400
pF
Rise time
tr
20
Turnon time
ton
30
Fall time
tf
50
Switching time
Turnoff time
toff
140
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
50
Gatesource charge
Qgs
34
Gatedrain (“miller”) charge
Qgd
VDD ≈ 80 V, VGS = 10 V, ID = 27 A
16
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
20
A
Pulse drain reverse current
(Note 1)
IDRP
80
A
Forward voltage (diode)
VDSF
IDR = 20 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
155
ns
Reverse recovery charge
Qrr
IDR = 20 A, VGS = 0 V, dIDR / dt = 50 A / μs
0.31
μC
Marking
Lot No.
Note 4
K2391
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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