參數(shù)資料
型號(hào): 2SK2380R
廠商: PANASONIC CORP
元件分類: 小信號(hào)晶體管
英文描述: 1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
封裝: SC-75, 3 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大小: 193K
代理商: 2SK2380R
262
Silicon Junction FETs (Small Signal)
unit: mm
2SK2380
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For infrared sensor
I Features
G Low gate to source leakage current, I
GSS
G Small capacitance of C
iss, Coss, Crss
G SS-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
VGDO
VGSO
ID
IG
PD
Tch
Tstg
Ratings
40
±1
10
125
55 to +125
Unit
V
mA
mW
°C
I Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Conditions
VDS = 10V, VGS = 0
VGS =
20V, V
DS = 0
IG =
10A, V
DS = 0
VDS = 10V, ID = 1A
VDS = 10V, VGS = 0, f = 1kHz
VDS = 10V, VGS = 0, f = 1MHz
min
50
40
0.05
max
200
0.5
3
Unit
A
nA
V
mS
pF
* I
DSS rank classification
typ
1.3
1
0.4
Runk
IDSS (mA)
Marking Symbol
Q
50 to 100
EBQ
R
70 to 130
EBR
S
100 to 200
EBS
1: Source
2: Drain
EIAJ: SC-89
3: Gate
SSMini3-F2 Package
Marking Symbol (Example): EB
0.28±0.05
3
12
0.28±0.05
(0.80)
1.60
+0.05
– 0.03
0.12
+0.05
– 0.02
0.60
+0.05
– 0.03
(0.80)
(0.51)
0
to
0.1
(0.15)
(0.44)
0.88
(0.375)
+0.05
–0.03
0.80
±0.05
(0.80)
1.60
±0.05
3
°
Symbol
IDSS*
IGSS
VDS
VGSC
| Yfs |
Ciss
Coss
Crss
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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