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參數(shù)資料
| 型號： | 2SK2347 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | High-Voltage, High-Speed Switching Applications |
| 中文描述： | 高壓，高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 55K |
| 代理商： | 2SK2347 |
2SK2347
Ordering number : EN5424A
High-Voltage, High-Speed
Switching Applications
N-Channel Silicon MOSFET
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
72597TS (KOTO) TA-1033 No.5424-1/4
Package Dimensions
unit: mm
2131-TO-3JML
[2SK2347]
SANYO: TO-3JML
1 : Gate
2 : Drain
3 : Source
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Symbol
VDSS
VGSS
ID
IDP
PD
Conditions
Ratings
Unit
V
V
A
A
W
W
°C
°C
1000
±30
20
40
4.6
160
150
PW
≤
10μs, duty cycle
≤
1%
Tc=25°C
Channel Temperature
Storage temperature
Tch
Tstg
–55 to +150
Electrical Characteristics
at Ta=25°C
Parameter
Symbol
Conditions
Ratings
typ
min
1000
max
Unit
D-S Breakdown Voltage
Zero-Gate Voltage Drain Current IDSS
Gate-to Source Leak Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source
ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
ID=1mA, VGS=0
VDS=1000V, VGS=0
VGS=±30V, VDS=0
VDS=10V, ID=1mA
VDS=20V, ID=10A
ID=10A, VGS=10V
V
1.0
mA
nA
V
S
IGSS
VGS(off)
|yfs|
RDS(on)
±100
3.5
1.5
5.0
10
0.6
0.8
Ciss
Coss
Crss
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
3300
750
500
pF
pF
pF
Continued on next page.
Features
Low ON resistance, ultrahigh-speed switching.
High reliability (Adoption of HVP process).
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SK2348 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Voltage, High-Speed Switching Applications |
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| 2SK2350(Q) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 200V 8.5A 3-Pin(3+Tab) TO-220NIS |
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