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參數(shù)資料
| 型號(hào)： | 2SK2341-AZ |
| 元件分類： | JFETs |
| 英文描述： | 11 A, 250 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 97K |
| 代理商： | 2SK2341-AZ |
2SK2341
2
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain to Source On-state Resistance
RDS(on)
0.21
0.26
VGS = 10 V, ID = 6 A
Gate to Source Cutoff Voltage
VGS(off)
2.0
4.0
V
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
yfs
3.0
S
VDS = 10 V, ID = 6 A
Drain Leakage Current
IDSS
100
A
VDS = 250V, VGS = 0
Gate to Source Leakage Current
IGSS
±100
nA
VGS =
±30 V, VDS = 0
Input Capacitance
Ciss
1090
pF
VDS = 10 V
Output Capacitance
Coss
420
pF
VGS = 0
Reverse Transfer Capacitance
Crss
80
pF
f = 1 MHz
Turn-On Delay Time
td(on)
20
ns
VGS = 10 V
Rise Time
tr
20
ns
VDD = 150 V
Turn-Off Delay Time
td(off)
50
ns
ID = 6 A, RG = 10
Fall Time
tf
15
ns
RL = 25
Total Gate Charge
QG
33
nC
VGS = 10 V
Gate to Source Charge
QGS
6.0
nC
ID = 11 A
Gate to Drain Charge
QGD
13
nC
VDD = 200 V
Diode Forward Voltage
VF(S-D)
1.0
V
IF = 11 A, VGS = 0
Reverse Recovery Time
trr
220
ns
1F = 11 A
Reverse Recovery Charge
Qrr
1.0
C
di/dt = 50 A/
s
Test Circuit 1 : Avalanche Capability
Test Circuit 2 : Switching Time
VGS = 20
→ 0 V
PG.
RG = 25
50
D.U.T.
L
VDD
PG.
RG = 10
D.U.T.
RL
VDD
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave
Form
ID
Wave
Form
VGS
ID
10 %
0
90 %
10 %
VGS (on)
ID
ton
toff
td(on)
tr
td (off)
tf
τ
Test Circuit 3 : Gate Charge
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
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