參數(shù)資料
型號(hào)： 2SK2292-01S
廠商： FUJI ELECTRIC CO LTD
元件分類： JFETs
英文描述： N-channel MOS-FET
中文描述： 4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： KPACK-3
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 88K
代理商： 2SK2292-01S
2SK2292-01L,S
FAP-IIA Series
N-channel MOS-FET
1,1
250V
4A
20W
> Features
-
High Speed Switching
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Voltage
-
V
GS
= ± 30V Guarantee
-
Avalanche Proof
> Outline Drawing
> Applications
-
Switching Regulators
-
UPS
-
DC-DC converters
-
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Drain-Gate-Voltage (R
GS
=20K
)
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
> Equivalent Circuit
Symbol
V
DS
V
DGR
I
D
I
D(puls)
V
GS
P
D
T
ch
T
stg
Rating
Unit
V
V
A
A
V
W
°C
°C
250
250
4
16
±30
20
150
-55 ~ +150
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
Test conditions
I
D
=1mA
I
D
=1mA
V
DS
=250V
V
GS
=0V
V
GS
=±30V
I
D
=2,0A
I
D
=2,0A
Min.
250
2,5
Typ.
Max.
Unit
V
V
μA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
A
A
V
ns
μC
V
GS
=0V
V
DS=
V
GS
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
V
GS
=10V
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=150V
I
D
=4A
V
GS
=10V
R
GS
=10
T
ch
=25°C
3,0
10
0,2
10
0,8
2,0
230
70
45
10
20
25
10
3,5
500
1,0
100
1,1
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
I
DR
I
DRM
V
SD
t
rr
Q
rr
1,0
350
110
70
15
30
40
15
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Continous Reverse Drain Current
Pulsed Reverse Drain Current
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
L = 100μH
4
4
8
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/μs T
ch
=25°C
1,0
110
0,5
1,5
-
Item
Thermal Resistance
Thermal Characteristics
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
Unit
°C/W
°C/W
62,5
相關(guān)PDF資料
PDF描述
2SK2311 High Speed,High Current Switching Application N Channel MOSFET(高速大電流轉(zhuǎn)換用 N溝道 MOS場(chǎng)效應(yīng)管)
2SK2312 High Speed, High Current Switching Application N Channel MOSFET(高速大電流轉(zhuǎn)換用的N溝道MOS場(chǎng)效應(yīng)管)
2SK2313 High Speed,High Current Switching Application N Channel MOSFET(高速大電流轉(zhuǎn)換用 N溝道 MOS場(chǎng)效應(yīng)管)
2SK2314 High Speed,High Current Switching Application N Channel MOSFET(高速大電流轉(zhuǎn)換用 N溝道 MOS場(chǎng)效應(yīng)管)
2SK2316 Ultrahigh-Speed Switching Applications
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