參數(shù)資料
型號(hào): 2SK2267
元件分類: JFETs
英文描述: 60 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-21F1B, 3 PIN
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 428K
代理商: 2SK2267
2SK2267
2009-12-09
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cutoff current
IDSS
VDS = 60 V, VGS = 0 V
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
VGS = 4 V, ID = 30 A
12
15
Drainsource ON-resistance
RDS (ON)
VGS = 10 V, ID = 30 A
8
11
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 30 A
40
60
S
Input capacitance
Ciss
5500
Reverse transfer capacitance
Crss
920
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
2600
pF
Rise time
tr
30
Turnon time
ton
60
Fall time
tf
65
Switching time
Turn–off time
toff
220
ns
Total gate charge (Gate–source
plus gate–drain)
Qg
170
Gate–source charge
Qgs
110
Gate–drain (“miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 60 A
60
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
60
A
Pulse drain reverse current
(Note 1)
IDRP
240
A
Forward voltage (diode)
VDSF
IDR = 60 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
150
ns
Reverse recovered charge
Qrr
IDR = 60 A, VGS = 0 V
dIDR / dt = 50 A / μs
0.3
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2SK2267
TOSHIBA
JAPAN
Lot No.
Note 4
Part No. (or abbreviation code)
相關(guān)PDF資料
PDF描述
2SK2276 5000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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