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| 型號： | 2SK223 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 80 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 封裝： | NP, SC-43, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 110K |
| 代理商： | 2SK223 |
42099TH (KT)/71095TS (KOTO)/6027KI/2275MW, TS No.659–1/4
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Junction Silicon FET
High Voltage Driver Applications
Ordering number:EN659K
2SK223
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2019B
[2SK223]
Features
Ultrahigh withstand voltage (VGDS≥–80V).
Due to low gate leakage currents even at high
voltage, the 2SK223 is suitable for a wide range of
application (IGDL=1nA/VDS=50V, ID=1mA).
High
yfs(yfs=20mS/VDS=30V, f=1kHz).
C
Electrical Characteristics at Ta = 25C
1 : Source
2 : Gate
3 : Drain
SANYO : NP
JEDEC : TO-92
EIAJ
: SC-43
* : The 2SK223 is classified by IDSS as follows (unit : mm) :
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