參數(shù)資料
型號: 2SK2175
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁數(shù): 2/9頁
文件大?。?/td> 112K
代理商: 2SK2175
2SK2175
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
I
AP
*
E
AR
*
Pch*
60
V
Gate to source voltage
±
20
15
V
Drain current
A
Drain peak current
1
60
A
Body to drain diode reverse drain current
15
A
Avalanche current
3
10
A
Avalanche energy
3
8.5
mJ
Channel dissipation
2
30
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes 1. PW
10
μ
s, duty cycle
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
50
Tstg
–55 to +150
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參數(shù)描述
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