參數(shù)資料
型號(hào): 2SK2173
元件分類: JFETs
英文描述: 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-16C1B, 3 PIN
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 447K
代理商: 2SK2173
2SK2173
2009-12-09
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut–off current
IDSS
VDS = 60 V, VGS = 0 V
100
μA
Drain–source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
VGS = 4 V, ID = 25 A
19
25
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 25 A
13
17
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 25 A
28
40
S
Input capacitance
Ciss
3350
Reverse transfer capacitance
Crss
550
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
1600
pF
Rise time
tr
25
Turnon time
ton
55
Fall time
tf
60
Switching time
Turnoff time
toff
180
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
110
Gatesource charge
Qgs
70
Gatedrain (“miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 50 A
40
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
50
A
Pulse drain reverse current
(Note 1)
IDRP
200
A
Forward voltage (diode)
VDSF
IDR = 50 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
120
ns
Reverse recovered charge
Qrr
IDR = 50 A, VGS = 0 V
dIDR / dt = 50 A / μs
0.2
μC
Marking
K2173
Lot No.
Note 4
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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