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參數(shù)資料
| 型號： | 2SK216 |
| 元件分類： | JFETs |
| 英文描述： | 0.5 A, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 48K |
| 代理商： | 2SK216 |
2SK213, 2SK214, 2SK215, 2SK216
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
2SK213
V
DSX
140
V
2SK214
160
2SK215
180
2SK216
200
Gate to source voltage
V
GSS
±15
V
Drain current
I
D
500
mA
Body to drain diode reverse drain current
I
DR
500
mA
Channel dissipation
Pch
1.75
W
Pch*
1
30
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–45 to +150
°C
Note:
1. Value at T
C =
25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source
2SK213
V
(BR)DSX
140
—
V
I
D = 1 mA, VGS = –2 V
breakdown voltage
2SK214
160
—
V
2SK215
180
—
V
2SK216
200
—
V
Gate to source breakdown
voltag
V
(BR)GSS
±15
—
V
I
G = ±10 A, VDS = 0
Gate to source voltage
V
GS(on)
0.2
—
1.5
V
I
D = 10 mA, VDS = 10 V *
1
Drain to source saturation
voltage
V
DS(sat)
—
2.0
V
I
D = 10 mA, VGD = 0 *
1
Forward transfer admittance
|y
fs|
2040—
mS
I
D = 10 mA, VDS = 20 V *
1
Input capacitance
Ciss
—
90
—
pF
I
D = 10 mA, VDS = 10 V,
Reverse transfer capacitance
Crss
—
2.2
—
pF
f = 1 MHz
Note:
1. Pulse test
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PDF描述 |
|---|---|
| 2SK214 | 0.5 A, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| 2SK217-D | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 2SK2170 | 20 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK2171-4 | 100 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2160 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SK21600 | 制造商:Panasonic Industrial Company 功能描述: |
| 2SK2161 | 制造商:SANYO Semiconductor Co Ltd 功能描述:9 A, 200 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220ML 制造商:ON Semiconductor 功能描述: |
| 2SK2161YB | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK2162 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) |
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