參數(shù)資料
型號(hào): 2SK2158
元件分類(lèi): 小信號(hào)晶體管
英文描述: 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁(yè)數(shù): 3/3頁(yè)
文件大小: 170K
代理商: 2SK2158
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2158
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
Document No. D11234EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
The 2SK2158 is an N-channel vertical type MOS FET featur-
ing an operating voltage as low as 1.5 V. Because it can be
driven on a low voltage and it is not necessary to consider
driving current, the 2SK2158 is suitable for use in low-voltage
portable systems such as headphone stereo sets and camcorders.
FEATURES
Capable of drive gate with 1.5 V
Because of high input impedance, there is no need to
consider driving current.
Bias resistance can be omitted, enabling reduction in total
number of parts.
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATINGS
UNIT
Drain to Source Voltage
VDSS
VGS = 0
50
V
Gate to Source Voltage
VGSS
VDS = 0
±7.0
V
Drain Current (DC)
ID(DC)
±0.1
A
Drain Current (pulse)
ID(pulse)
PW
≤ 10 ms,
±0.2
A
Duty Cycle
≤ 50 %
Total Power Dissipation
PT
200
mW
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150
C
2.8
± 0.2
1.5
3
2
0.95
1
Marking
Marking: G23
3
1
2
Gate protection
diode
Internal
diode
EQUIVALENT CIRCUIT
0.65
+0.1
–0.15
0.4
+0.1
–0.05
0.4
+0.1
–0.05
0.16
+0.1
–0.06
0
to
0.1
2.9
±0.2
0.95
0.3
1.1
to
1.4
PIN CONNECTION
1. Source (S)
2. Gate (G)
3. Drain (D)
PACKAGE DIMENSIONS
(in millimeters)
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