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參數(shù)資料
| 型號： | 2SK2140-Z |
| 元件分類： | JFETs |
| 英文描述： | 7 A, 600 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 6/10頁 |
| 文件大小： | 246K |
| 代理商： | 2SK2140-Z |
2SK2140, 2SK2140-Z
3
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
20
140
160
100
TC - Case Temperature - C
dT
-
Percentage
of
Rated
Current
-
%
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
FORWARD BIAS SAFE OPERATING AREA
10
100
1 000
100
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
510
10
80
0
40
1.0
10
0.1
60
20
60
40
80
100
120
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
140
160
TC - Case Temperature - C
P
T-
Total
Power
Dissipation
-
W
80
0
40
60
20
60
40
80
100
120
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
510
15
100
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
1
10
0.1
5
0
1
0
Pulsed
10 V
8 V
6 V
VGS = 20 V
TC = –25 C
25 C
75 C
125 C
VDS = 10 V
Pulsed
TC = 25 C
Single Pulse
1 ms
Power
Dissipation
Limited
ID (DC)
ID (pulse)
R
DS
(ON)
Limited
(at
V
GS
=
20
V)
PW
=
10
s
100
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2140 | 7 A, 600 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2141 | 6 A, 600 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2145 | 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK2145-Y | 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK2145-BL | 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2141 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK2142 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 12A I(D) | TO-220AB |
| 2SK2144 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2145 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL JUNCTION TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS) |
| 2SK2145_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL JUNCTION TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS) |
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