參數(shù)資料
型號(hào): 2SK2116-E
元件分類: JFETs
英文描述: 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220CFM, 3 PIN
文件頁(yè)數(shù): 4/9頁(yè)
文件大?。?/td> 997K
代理商: 2SK2116-E
2SK2116, 2SK2117
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
2SK2116
VDSS
450
V
Drain to source voltage
2SK2117
VDSS
500
Gate to source voltage
VGSS
±30
V
Drain current
ID
7
A
Drain peak current
ID(pulse)*
1
28
A
Body to drain diode reverse drain current
IDR
7
A
Channel dissipation
Pch*
2
35
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
2SK2116
450
Drain to source
breakdown voltage
2SK2117
V(BR)DSS
500
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±30
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
±10
A
VGS =
±25 V, VDS = 0
2SK2116
VDS = 360 V, VGS = 0
Zero gate voltage drain
current
2SK2117
IDSS
250
A
VDS = 400 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
3.0
V
ID = 1 mA, VDS = 10 V
2SK2116
0.6
0.8
Static drain to source on
state resistance
2SK2117
RDS(on)
0.7
0.9
ID = 4 A, VGS = 10 V*
3
Forward transfer admittance
|yfs|
4.0
6.5
S
ID = 4 A, VDS = 10 V*
3
Input capacitance
Ciss
1050
pF
Output capacitance
Coss
280
pF
Reverse transfer capacitance
Crss
40
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
15
ns
Rise time
tr
55
ns
Turn-off delay time
td(off)
95
ns
Fall time
tf
40
ns
ID = 4 A, VGS = 10 V,
RL = 7.5
Body to drain diode forward voltage
VDF
0.95
V
IF = 7 A, VGS = 0
Body to drain diode reverse recovery
time
trr
320
ns
IF = 7 A, VGS = 0,
diF / dt = 100 A /
s
Note:
3. Pulse Test
相關(guān)PDF資料
PDF描述
2SK2117-E 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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