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參數(shù)資料
| 型號(hào)： | 2SK2115 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅N溝道場(chǎng)效應(yīng)晶體管（不適用溝道MOSFET的） |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大小： | 33K |
| 代理商： | 2SK2115 |
2SK2114, 2SK2115
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source
breakdown
voltage
2SK2114
V
(BR)DSS
450
—
—
V
I
D
= 10 mA, V
GS
= 0
2SK2115
500
Gate to source breakdown
voltage
V
(BR)GSS
±
30
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
I
DSS
—
—
±
10
250
μ
A
μ
A
V
GS
=
±
25 V, V
DS
= 0
V
DS
= 360 V, V
GS
= 0
Zero gate
voltage drain
current
2SK2114
—
—
2SK2115
V
DS
= 400 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 2.5 A, V
GS
= 10 V*
Gate to source cutoff voltage
V
GS(off)
R
DS(on)
2.0
—
3.0
V
Static drain to
source on state
resistance
2SK2114
—
1.0
1.4
1
2SK2115
—
1.2
1.5
Forward transfer admittance
|y
fs
|
2.5
4.0
—
S
I
D
= 2.5 A
V
DS
= 10 V*
V
DS
= 10 V
V
= 0
f = 1 MHz
1
Input capacitance
Ciss
—
640
—
pF
Output capacitance
Coss
—
160
—
pF
Reverse transfer capacitance
Crss
—
20
—
pF
Turn-on delay time
t
d(on)
—
10
—
ns
I
D
= 2.5 A
V
GS
= 10 V
R
L
= 12
Rise time
t
r
t
d(off)
t
f
V
DF
—
25
—
ns
Turn-off delay time
—
50
—
ns
Fall time
—
30
—
ns
Body to drain diode forward
voltage
—
0.95
—
V
I
F
= 5 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse Test
t
rr
—
300
—
ns
I
= 5 A, V
= 0,
diF / dt = 100 A /
μ
s
See characteristics curve of 2SK1155, 2SK1156.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2116 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2117 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2118 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2119 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 25A I(D) | TO-220FN |
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