參數(shù)資料
型號(hào): 2SK2112
元件分類: JFETs
英文描述: 1 A, 100 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 3/6頁
文件大?。?/td> 59K
代理商: 2SK2112
2SK2112
3
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
30
60
90
120
150
TA - Ambient Temperature - C
dT
-
Derating
Factor
-
%
FORWARD BIAS SAFE OPERATING AREA
10
5
2
1
0.2
0.1
2
5
20
50
100
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0.5
1
10
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1.0
0.8
0.6
0.4
0.2
0
0.4
0.8
1.2
1.6
2.0
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
10
ms
1 ms
PW
=
100
ms
DC
4.5 V
4.0 V
3.5 V
3.0 V
2.5 V
10 V
VGS = 2.0 V
TRANSFER CHARACTERISTICS
1
0.1
0.01
0.001
0.5
1
1.5
2
2.5
3
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
0.0001
VDS = 10 V
TA = 75 C
25 C
–25 C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
1
0.1
0.001
0.01
0.1
1
ID - Drain Current - A
|y
fs
|-
Forward
Transfer
Admittance
-
S
0.01
VDS = 10 V
25 C
75 C
TA = –25 C
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
1.5
1
0.01
0.1
1
10
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
0
VGS = 4 V
0.5
TA = 75 C
25 C
–25 C
Single pulse
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