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參數(shù)資料
| 型號(hào)： | 2SK2085TZ-E |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | SC-51, TO-92MOD, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 76K |
| 代理商： | 2SK2085TZ-E |
2SK2085
Rev.2.00 Sep. 07, 2005 page 4 of 6
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State
Resistance vs. Temperature
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
Forward Transfer Admittance
vs. Drain Current
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body to Drain Diode Reverse
Recovery Time
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
Gate
to
Source
Voltage
V
GS
(V)
Drain Current ID (A)
Switching
Time
t
(ns)
Switching Characteristics
2.0
1.6
1.2
0.8
0.4
–40
0
40
80
120
160
0
Pulse Test
10 V
VGS = 4 V
ID = 1 A
0.5 A
0.2 A
1 A
0.5 A
0.2 A
10
2
1
0.2
0.1
0.5
5
0.05 0.1
0.2
0.5
1
2
5
Tc = –25
°C
25
°C
75
°C
VDS = 10 V
Pulse Test
200
100
20
10
50
0.02
0.05
0.1
0.2
0.5
1
2
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
010
20
30
40
50
1000
100
10
1
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
200
160
120
80
40
0
20
16
12
8
4
0
28
6
8
10
VDD = 25 V
50 V
80 V
VDD = 25 V
50 V
80 V
VGS
VDS
ID = 1 A
200
100
50
20
10
5
2
0.02
0.05
0.1
0.2
0.5
1
2
tf
tr
td(on)
td(off)
VGS = 10 V
VDD = 30 V
PW = 2
s
duty < 1 %
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