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參數(shù)資料
| 型號： | 2SK2085 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TO-92MOD, 3 PIN |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 57K |
| 代理商： | 2SK2085 |
2SK2085
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
100
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
100
A
V
DS = 80 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.6
0.9
I
D = 0.5 A
V
GS = 10 V*
1
—
0.75
1.35
I
D = 0.5 A
V
GS = 4 V*
1
Forward transfer admittance
|y
fs|
0.7
1.2
—
S
I
D = 0.5 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
130
—
pF
V
DS = 10 V
Output capacitance
Coss
—
50
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
12
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—7
—ns
I
D = 0.5 A
Rise time
t
r
—
6.5
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
55
—
ns
R
L = 60
Fall time
t
f
—20—ns
Body to drain diode forward
voltage
V
DF
—
0.85
—
V
I
F = 1.0 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
80
—
ns
I
F = 1.0 A, VGS = 0,
di
F / dt = 50 A / s
Note
1. Pulse Test
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2085(TZ-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK2089 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5A I(D) | TO-251VAR |
| 2SK208GR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 2.6MA I(DSS) | SC-59 |
| 2SK208-GR | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:General Purpose and Impedance Converter and Condenser Microphone Applications |
| 2SK208-GR(TE85L,F) | 功能描述:JFET N-Ch SM Sig FET -50V NF 0.5dB -1.0nA -30V RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
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