參數(shù)資料
型號(hào): 2SK2075
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場(chǎng)效應(yīng)晶體管
文件頁數(shù): 6/10頁
文件大?。?/td> 47K
代理商: 2SK2075
2SK2075
6
5
0.05 0.1
10
500
200
100
50
20
Reverse Drain Current I (A)
R
0.2
0.5
10
20
50
di / dt = 100 A /
μ
s
V = 0, Ta = 25
°
C
Body to Drain Diode Reverse
Recovery Time
10000
1000
100
10
0
10
20
30
40
50
C
Drain to Source Voltage V (V)
Ciss
Coss
Crss
V = 0
f = 1 MHz
Typical Capacitance vs.
Drain to Source Voltage
500
400
300
200
100
0
20
40
60
80
100
Gate Charge Qg (nc)
D
D
20
16
12
8
4
0
G
G
V = 50 V
100 V
200 V
V = 200 V
100 V
50 V
I = 20 A
Dynamic Input Characteristics
V
GS
V
DS
500
200
100
50
20
10
5
0.5
Drain Current I (A)
S
1
2
5
10
20
50
tf
r
d(off)
t
d(on)
t
V = 10 V, V = 30 V
PW = 5 μs, duty < 1 %
Switching Characteristics
相關(guān)PDF資料
PDF描述
2SK2076 Impedance Converter Applications
2SK2083 Very High-Speed Switching Applications
2SK2084 Silicon N-Channel MOS FET
2SK2090 N-Channel MOS FET FOR HIGH-SPEED SWITCHING
2SK2091 N-Channel Junction Silicon FET for Impedance Converter Applications(阻抗轉(zhuǎn)換器應(yīng)用的N溝道結(jié)型硅場(chǎng)效應(yīng)管)
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