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參數(shù)資料
| 型號： | 2SK2070 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 59K |
| 代理商： | 2SK2070 |
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2070
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
PACKAGE DIMENSIONS (in mm)
7.0 MAX.
1.2
2.0
9.0
MAX.
12.0
MIN.
0.55 ±0.1
0.8 ±0.1
0.6 ±0.1
3.0
MAX.
0.6 ±0.1
1.7 1.7
1.5
4.0
MAX.
G D S
EQUIVALENT CIRCUIT
Source (S)
Internal
diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
The 2SK2070 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators, such as
motors and DC/DC converters.
FEATURES
New package intermediate between small-signal and power
models
Can be directly driven by output of 5-V IC
Low ON resistance
RDS(on) = 0.45
MAX. @VGS = 4 V, ID = 1.0 A
RDS(on) = 0.35
MAX. @VGS = 10 V, ID = 1.0 A
Document No. D11227EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
VDSS
VGS = 0
100
V
Gate to Source Voltage
VGSS
VDS = 0
±20
V
Drain Current (DC)
ID(DC)
±1.5
A
Drain Current (Pulse)
ID(pulse)
PW
≤ 10 ms,
±3.0
A
Duty cycle
≤ 50 %
Total Power Dissipation
PT
1.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2070-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2071-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SK2071-01L | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N-channel MOS-FET |
| 2SK2071-01S | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N-channel MOS-FET |
| 2SK2072-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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