- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄33485 > 2SK2012 18 A, 250 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220ML PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK2012 |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 18 A, 250 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220ML |
| 封裝： | TO-220ML, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 40K |
| 代理商： | 2SK2012 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN4321B
2SK2012
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2063A
[2SK2012]
Features
Low ON-resistance.
Ultrahigh-speed switching.
Low-voltage drive.
Micaless package facilitating mounting.
C
Electrical Characteristics at Ta = 25C
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
Tc=25C
PW
≤10s, duty cycle≤1%
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
c
r
u
o
S
-
o
t
-
n
i
a
r
DV
S
D
0
5
2V
e
g
a
t
l
o
V
e
c
r
u
o
S
-
o
t
-
e
t
a
GV
S
G
0
3
±V
)
C
D
(
t
n
e
r
u
C
n
i
a
r
DID
8
1A
)
e
s
l
u
P
(
t
n
e
r
u
C
n
i
a
r
DI P
D
2
7A
n
o
i
t
a
p
i
s
i
D
r
e
w
o
P
e
l
b
a
w
o
ll
APD
0
.
2W
0
4W
e
r
u
t
a
r
e
p
m
e
T
l
e
n
a
h
Ch
c
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
–
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
e
g
a
t
l
o
V
n
w
o
d
k
a
e
r
B
e
c
r
u
o
S
-
o
t
-
n
i
a
r
DV
S
D
)
R
B
(
ID
V
,
A
m
1
=
S
G
0
=0
5
2V
e
g
a
t
l
o
V
n
w
o
d
k
a
e
r
B
e
c
r
u
o
S
-
o
t
-
e
t
a
GV
S
G
)
R
B
(
IG
V
,
A
0
1
±
=
S
D
0
=0
3
±V
t
n
e
r
u
C
n
i
a
r
D
e
g
a
t
l
o
V
e
t
a
G
o
r
e
ZI
S
D
V S
D
V
,
V
0
5
2
=
S
G
0
=0
0
1A
t
n
e
r
u
C
e
g
a
k
a
e
L
e
c
u
o
S
-
o
t
-
e
t
a
GI
S
G
V S
G
V
,
V
5
2
±
=
S
D
0
=0
1
±A
e
g
a
t
l
o
V
f
o
t
u
CV
)
f
o
(
S
G
V S
D
I
,
V
0
1
=
D
A
m
1
=5
.
15
.
2V
e
c
n
a
t
i
m
d
A
r
e
f
s
n
a
r
T
d
r
a
w
r
o
F|
s
f
y
|V S
D
I
,
V
0
1
=
D
A
2
1
=1
18
1S
e
c
n
a
t
s
i
s
e
R
e
t
a
t
S
-
n
O
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
c
i
t
a
t
S
R
)
n
o
(
S
D
ID
V
,
A
2
1
=
S
G
V
0
1
=2
1
.
06
1
.
0
1.6
1.2
0.75
14.0
16.0
10.0
18.1
5.6
3.2
7.2
3.5
2.55
2.4
4.5
2.8
0.7
2.55
2.4
1
23
Continued on next page.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2013-O | 1 A, 180 V, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2013-Y | 1 A, 180 V, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2033TE85R | 100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 2SK2033 | 100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 2SK2033 | 100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2013 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION) |
| 2SK2013_06 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION |
| 2SK2013_09 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Audio Frequency Power Amplifier Application |
| 2SK2013O | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 1A I(D) | SC-67 |
| 2SK2013Y | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 1A I(D) | SC-67 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。