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參數(shù)資料
| 型號(hào)： | 2SK1971-E |
| 元件分類： | JFETs |
| 英文描述： | 35 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PL, 3 PIN |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 104K |
| 代理商： | 2SK1971-E |
2SK1971
REJ03G0990-0300 Rev.3.00 May 13, 2009
Page 3 of 6
Main Characteristics
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain
Current
I
D
(A)
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State
Resistance vs. Drain Current
300
0
100
50
150
200
100
1000
30
3
0.1
1
30
100
300
0.3
3
10
300 1000
10
s
1 ms
DC
Operation
(Tc
=
25
°C)
100
s
PW
=
10
ms
(1
Shot)
Operation in this area is
limited by R
(on)
DS
1
10
100
Ta = 25
°C
50
40
30
20
10
0
10
2030
4050
10 V
Pulse Test
6 V
4.5 V
V
= 4 V
GS
5.5 V
5 V
50
40
30
20
10
02
4
6
8
10
Pulse Test
Tc = 25
°C
–25
°C
75
°C
V
= 20 V
DS
20
16
12
8
4
04
8
12
16
Pulse Test
20 A
I = 10 A
D
20
50 A
0.1
5
0.2
0.5
1
2
5
210
20
50
0.05
100 200
V
= 10 V
GS
Pulse Test
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