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參數(shù)資料
| 型號(hào)： | 2SK1968 |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 600 V, 0.88 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 62K |
| 代理商： | 2SK1968 |
2SK1968
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
600
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
A
V
DS = 500 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.68
0.88
I
D = 6 A
V
GS = 10 V*
1
Forward transfer admittance
|y
fs|
5
10
—
S
I
D = 6 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
1800
—
pF
V
DS = 10 V
Output capacitance
Coss
—
400
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
60
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
25
—
ns
I
D = 6 A
Rise time
t
r
—
70
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
145
—
ns
R
L = 5
Fall time
t
f
—65—ns
Body to drain diode forward
voltage
V
DF
—
1.1
—
V
I
F = 12 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
670
—
ns
I
F = 12 A, VGS = 0,
di
F / dt = 100 A / s
Note
1. Pulse Test
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