參數(shù)資料
型號: 2SK1949
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場效應晶體管(不適用溝道MOSFET的)
文件頁數(shù): 2/9頁
文件大?。?/td> 64K
代理商: 2SK1949
2SK1949(L), 2SK1949(S)
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
I
AP
*
E
AR
*
Pch*
60
V
Gate to source voltage
±
20
5
V
Drain current
A
Drain peak current
1
20
A
Body to drain diode reverse drain current
5
A
Avalanche current
3
5
A
Avalanche energy
3
2.1
mJ
Channel dissipation
2
20
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes 1. PW
10
μ
s, duty cycle
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
50
Tstg
–55 to +150
相關PDF資料
PDF描述
2SK1949L Silicon N-Channel MOS FET(N溝道MOSFET)
2SK1949S Silicon N-Channel MOS FET(N溝道MOSFET)
2SK1950 Silicon N-Channel MOS FET(N溝道MOSFET)
2SK1950L Silicon N-Channel MOS FET(N溝道MOSFET)
2SK1950S Silicon N-Channel MOS FET(N溝道MOSFET)
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