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參數(shù)資料
| 型號(hào)： | 2SK1947 |
| 元件分類： | JFETs |
| 英文描述： | 0.06 ohm, POWER, FET |
| 封裝： | TO-3PL, 3 PIN |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大小： | 47K |
| 代理商： | 2SK1947 |
2SK1947
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
250
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
AV
DS = 200 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.047
0.06
I
D = 25 A
V
GS = 10 V*
1
Forward transfer admittance
|y
fs|20
30
—
S
I
D = 25 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
5810
—
pF
V
DS = 10 V
Output capacitance
Coss
—
2360
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
270
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
75
—
ns
I
D = 25 A
Rise time
t
r
—
270
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
420
—
ns
R
L = 1.2
Fall time
t
f
—
200
—
ns
Body to drain diode forward
voltage
V
DF
—
1.2
—
V
I
F = 50 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
140
—
ns
I
F = 50 A, VGS = 0,
di
F / dt = 100 A / s
Note
1. Pulse Test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1947(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK1948 | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 250V 50A 3-Pin(3+Tab) TO-3PL |
| 2SK1949L(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1954 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1954-Z(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
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