參數(shù)資料
型號: 2SK1941
廠商: FUJI ELECTRIC HOLDINGS CO., LTD.
英文描述: N-channel MOS-FET
中文描述: N溝道場效應(yīng)管
文件頁數(shù): 2/2頁
文件大小: 188K
代理商: 2SK1941
N-channel MOS-FET
600V
0,55
> Characteristics
2SK1941-01R
FAP-IIA Series
16A
100W
Typical Output Characteristics
Drain-Source-On-State Resistance vs. T
ch
Typical Transfer Characteristics
I
D
1
R
D
]
2
I
D
3
V
DS
[V]
T
ch
[°C]
V
GS
[V]
Typical Drain-Source-On-State-Resistance vs. I
D
Typical Forward Transconductance vs. I
D
Gate Threshold Voltage vs. T
ch
R
D
]
4
g
f
5
V
G
6
I
D
[A]
I
D
[A]
T
ch
[°C]
Typical Capacitance vs. V
DS
Typical Input Charge
Forward Characteristics of Reverse Diode
C
7
V
D
8
V
G
I
F
9
V
DS
[V]
Q
g
[nC]
V
SD
[V]
Allowable Power Dissipation vs. T
C
Safe operation area
Z
t
Transient Thermal impedance
11
P
D
10
I
D
12
T
c
[°C]
V
DS
[V]
t [s]
This specification is subject to change without notice!
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