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參數(shù)資料
| 型號(hào)： | 2SK1931 |
| 廠商： | Shindengen Electric Manufacturing Company, Ltd. |
| 英文描述： | VR Series Power MOSFET(200V 5A) |
| 中文描述： | VR系列功率MOSFET（200伏5A條） |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大小： | 370K |
| 代理商： | 2SK1931 |
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK1931 ( F5E20 )
VR Series Power MOSFET
●
Electrical Characteristics Tc = 25
℃
Item
Symbol
V
(BR)DSS
I
D
=
1
mA, V
GS
= 0V
I
DSS
V
DS
= 200V, V
GS
= 0V
I
GSS
V
GS
=
±
30V, V
DS
= 0V
g
fs
I
D
= 2.5A, V
DS
=
1
0V
R
DS(ON)
I
D
= 2.5A, V
GS
=
1
0V
V
TH
I
D
=
1
mA, V
DS
=
1
0V
V
SD
I
S
= 2.5A, V
GS
= 0V
θ
jc
junction to case
Qg
VGS =
1
0V, I
D
= 5A, V
DD
=
1
50V
C
iss
C
rss
V
DS
=
1
0V, V
GS
= 0V, f =
1
MH
Z
C
oss
t
on
I
D
= 2.5A, V
GS
=
1
0V, R
L
= 40
Ω
t
off
Conditions
Min.
200
Typ.
Max.
Unit
V
μ
A
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward Tran
ｓ
conductance
Static Drain-Source On-
ｓ
tate Resistance
Gate Threshold Voltage
Source-Drain Diode Forward Voltage
Thermal Resistance
Total Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Time
Turn-Off Time
250
±
0.
1
0.9
1
.8
0.45
3
S
Ω
V
0.65
4
1
.5
6.25
2
℃
/
Ｗ
nC
11
360
45
1
90
55
75
pF
11
0
1
50
ns
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