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參數(shù)資料
| 型號： | 2SK1930 |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10S1B, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 0K |
| 代理商： | 2SK1930 |
2SK1930
2006-06-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
—
±100
nA
Drain cutoff current
IDSS
VDS = 800 V, VGS = 0 V
—
300
A
Drainsource breakdown
voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
1000
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
—
3.5
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 2 A
—
3.0
3.8
Forward transfer admittance
|Yfs|
VDS = 20 V, ID = 2 A
1.0
2.0
—
S
Input capacitance
Ciss
—
700
—
Reverse transfer capacitance
Crss
—
55
—
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
—
100
—
pF
Rise time
tr
—
18
—
Turnon time
ton
—
30
—
Fall time
tf
—
12
—
Switching time
Turnoff time
toff
—
70
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
60
—
Gatesource charge
Qgs
—
35
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 4 A
—
25
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
4
A
Pulse drain reverse current
(Note 1)
IDRP
—
12
A
Forward voltage (diode)
VDSF
IDR = 4 A, VGS = 0 V
—
1.9
V
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K1930
Part No. (or abbreviation code)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1930(Q) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 1KV 4A 3-Pin (3+Tab) TO-220FL/SM 制造商:Toshiba 功能描述:Trans MOSFET N-CH 1KV 4A 3-Pin (3+Tab) TO-220FL/SM Cut Tape |
| 2SK1930(TE24L,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 1000V 4A TO220SM |
| 2SK1930-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK1931-7101 | 制造商:Shindengen Electric Mfg 功能描述:Cut Tape |
| 2SK1933(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
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