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參數(shù)資料
| 型號： | 2SK1918S |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅N溝道場效應(yīng)晶體管（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 28K |
| 代理商： | 2SK1918S |
2SK1918(L), 2SK1918(S)
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
250
μ
A
μ
A
V
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 50 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 15 A
V
GS
= 10 V*
I
D
= 15 A
V
GS
= 4 V*
I
D
= 15 A
V
DS
= 10 V*
V
DS
= 10 V
V
= 0
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
V
GS(off)
R
DS(on)
1.0
—
2.25
Static drain to source on state
resistance
—
0.03
0.04
1
—
0.043
0.06
1
Forward transfer admittance
|y
fs
|
12
21
—
S
1
Input capacitance
Ciss
—
1450
—
pF
Output capacitance
Coss
—
655
—
pF
Reverse transfer capacitance
Crss
—
195
—
pF
Turn-on delay time
t
d(on)
—
20
—
ns
I
D
= 15 A
V
GS
= 10 V
R
L
= 2
Rise time
t
r
t
d(off)
t
f
V
DF
—
110
—
ns
Turn-off delay time
—
225
—
ns
Fall time
—
145
—
ns
Body to drain diode forward
voltage
—
1.2
—
V
I
F
= 25 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse Test
t
rr
—
100
—
ns
I
= 25 A, V
= 0,
diF / dt = 50 A /
μ
s
See characteristics curves of 2SK1910
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